1 publication order number : ndul09n150c/d www.onsemi.com ? semiconductor component s industries, llc, 2015 february 2015 - rev. 1 ordering information see detailed ordering and shipping info rmation on page 5 of this data sheet. ndul09n150c features ? low on-resistance ? high speed switching ? ultra high voltage ? 100% avalanche tested ? pb-free and rohs compliance specifications absolute maximum ratings at ta = 25 ? c parameter symbol value unit drain to source voltage v dss 1500 v gate to source voltage v gss 30 v drain current (dc) i d 9a drain current (dc) limited by package i dl 6 a drain current (pulse) pw ? 10 ? s, duty cycle ? 1% i dp 18 a power dissipation p d 3.0 w tc=25 ? c 78 junction temperature tj 150 ? c storage temperature tstg ? 55 to +150 ? c source current (body diode) i s 6a avalanche energy (single pulse) * 1 e as 197 mj lead temperature for soldering purposes, 3 mm from case for 10 seconds t l 260 ? c thermal resistance ratings parameter symbol value unit junction to case steady state r ? jc 1.60 ? c/w junction to ambient * 2 r ? ja 41.7 note : * 1 v dd =50v, l=10mh, i av =6a (fig.1) * 2 insertion mounted power mosfet 1500v, 3.0 ? , 9a, n-channel stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should n ot be assumed, damage may occur and reliability may be affected. electrical connection n-channel marking
ndul09n150c www.onsemi.com 2 electrical characteristics at ta ? 25 ? c parameter symbol conditions value unit min typ max drain to source breakdown voltage v( br ) dss i d =10ma, v gs =0v 1500 v zero-gate voltage drain current i dss v ds =1200v, v gs =0v 1 ma gate to source leakage current i gss v gs =30v, v ds =0v ? 100 na gate threshold voltage v gs (th) v ds =10v, i d =1ma 2 4 v forward transconductance g fs v ds =20v, i d =3a 5.2 s static drain to source on-state resistance r ds (on) i d =3a, v gs =10v 2.2 3.0 ? input capacitance ciss v ds =30v, f=1mhz 2025 pf output capacitance coss 222 pf reverse transfer capacitance crss 66 pf turn-on delay time t d (on) see fig.2 33 ns rise time t r 75 ns turn-off delay time t d (off) 500 ns fall time t f 111 ns total gate charge qg v ds =200v, v gs =10v, i d =6a 114 nc gate to source charge qgs 12 nc gate to drain ?miller? charge qgd 57 nc forward diode voltage v sd i s =6a, v gs =0v 0.8 1.5 v reverse recovery time t rr see fig.3 1050 ns reverse recovery charge q rr i s =6a, v gs =0v, di/dt=100a/ ? s 9010 nc fig.1 : unclamped inductive switching fi g.2 : switching time test circuit test circuit fig.3 : reverse recovery time test circuit product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product per formance may not be indicated by the electrical characteristics if operated under different conditions.
ndul09n150c www.onsemi.com 3
ndul09n150c www.onsemi.com 4
ndul09n150c www.onsemi.com 5 on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc) or its subsidiaries in the united st ates and/or other countries. scillc owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a lis ting of scillc?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf . scillc reserves the right to make changes with out further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any parti cular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specific ations can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated fo r each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc pro ducts are not designed, intended, or authorized for use as com ponents in systems int ended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees ar ising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that sci llc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject t oall applicable copyright laws and is not for resale in any manner. package dimensions NDUL09N150CG unit : mm 1 : gate 2 : drain 3 : source ordering information device package shipping note NDUL09N150CG to-3pf-3l sc-94 30pcs. / tube pb-free note on usage : since the ndul09n150c is a mosfet product, please avoid using this de vice in the vicinity of highly charged objects. to-3pf-3l case 340ah issue a notes: 1. dimensioning and tolerancing per asme y14.5m, 2009. 2. controlling dimension: millimeters. 3. contour uncontrolled in this area (6 places). 4. dimensions d and e do not include mold flash or gate protrusions. mold flash and gate protrusions not to exceed 0.13 per side. these dimensions are to be mea sured at the outermost extreme of the plastic body. 5. dimension b2 does not include dambar protrusion. lead width including protrusion shall not exceed 2.20. dim min max millimeters d 24.30 24.70 e 15.30 15.70 a 5.30 5.70 b 0.65 0.95 b2 1.90 2.15 a1 2.80 3.20 c 0.80 1.10 l 19.10 19.50 q 4.30 4.70 e 5.35 5.55 l1 4.80 5.20 p 3.40 3.80 b3 3.80 4.20 d l b3 b2 c a3 a 123 3x seating plane note 3 a2 3.10 3.50 a3 1.80 2.20 d2 24.70 25.30 d3 3.30 3.70 h1 9.80 10.20 l2 1.90 2.20 a1 d3 a2 h1 d2 q l1 l2 e p b 3x e
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